The University of Manchester - School of Electrical and Electronic Engineering
Closing Date: 31 December 2009
Head of School: Prof Andrew Gibson
Supervisor: Dr Max Migliorato (Microelectronics and Nanostructures Group)
The project
A 3.5 year PhD studentship is available at the School of Electrical and Electronic Engineering (E&EE) at the University of Manchester.
The Student will develop a novel modelling approach to designing novel SiGe structures for optoelectronic applications. This work will be performed in collaboration with the University of Roma 3 in Italy, where test structures will be prepared, and a scientific software company, Accelrys Ltd, which is interested in the commercial exploitation of the software developed for this project. The work in Manchester will be predominantly simulations with some assessment work (an experimental officer will be involved in this) of the semiconductor materials and structures produced in Rome in order to test the viability of the modelling work.
The novel modelling tools developed by the applicants will provide an essential tool to solving a wide range of problems in Si optoelectronics that have so far hampered worldwide efforts to transforming what appears to be fundamentally possible into a real device. Silicon, Germanium and their alloys are well known indirect bandgap materials. Computer design of strain engineering of SiGe layers will make it possible to generate a direct bandgap in real devices and hence pave the way for Si integrated heteropolar optical devices in the near infrared. Furthermore, a detailed knowledge of the band alignment at the heterointerface will also contribute to the current global effort in generating unipolar devices such as Quantum Cascade Lasers operating in the THz region
The significance of this work is duplex: on one hand the modelling techniques developed will represent a major step towards predictive modelling of large scale simulations of Semiconductors, with implications extending to compound semiconductors and nanostructures. In view of which we have established the commercial collaboration with Accelrys Ltd. On the other hand the impact of the modelling techniques on the current experimental effort could ultimately provide the key to revolutionary SiGe based laser emitters.
This work fits in the themes of the EPSRC ICT programme "Grand challenges in Silicon Technology", in particular GC1 "Novel devices and processes using silicon-based technologies", GC2 "Modelling and simulation for silicon-based technologies" and GC3 "Characterisation for silicon-based technologies".
Entry requirements
It is anticipated that the suitable candidates will have a 2:1 degree (upper second or equivalent) in Engineering or Physics. Strong background or at least predisposition towards the Physical aspects of Semiconductor Science or Solid State Physics is highly preferable. Computational skills and aptitude towards Modelling are a requirement.
Funding
UK/EU successful applicants will receive full funding for tuition fees and a stipend in the region of £13,000 per annum, tax free.
Please note, this scholarship does not fully cover students from outside the EU, as only a stipend of about £4,000 can be offered after tuition fees are paid. It is the sole responsibility of the applicant to obtain additional funding of at least £5,000 per annum to cover living costs.
For further information about the project or on how to apply please contact: Marie Davies
