University of Canterbury, New Zealand - Department of Electrical and Computer Engineering
Christchurch, New Zealand
Duration: 3 years
Requirements: A Bachelors degree (1st class honours) and/or Masters degree, in either Electrical Engineering, Materials Science, or Condensed Matter Physics.
Closing Date: 15 January 2010
Start Date: ASAP
See http://www.elec.canterbury.ac.nz/people/durbin.shtml for further details
P-Type In-rich Indium Gallium Nitride for Optoelectronic Device Applications
Indium gallium nitride is the semiconductor which enables a range of short wavelength optoelectronic applications, from solid state lighting to Blu-Ray consumer products. All of this is accomplished using relatively gallium-rich alloys. At the opposite end of the spectrum, the binary endpoint InN has an infrared bandgap, and some unusual properties including a quantum-confined surface electron accumulation layer. Doping this material p-type is non-trivial but has been demonstrated.
In this project, plasma-source molecular beam epitaxy - an important industrial semiconductor thin film crystal growth technique - will be used to explore more fully the potential for p-type doping, and a variety of characterisation techniques including photoluminescence, electro-chemical capacitance, and variable magnetic field Hall effect will be applied to both as-grown and surface treated samples in an effort to realise device-quality material.
To apply for this position, please send a CV to the following email address - phdstudentships@elec.canterbury.ac.nz
